SI7898DP-T1-E3
ActiveVishay Dale
POWER MOSFET, N CHANNEL, 150 V, 4.8 A, 0.095 OHM, SOIC, SURFACE MOUNT
SI7898DP-T1-E3
ActiveVishay Dale
POWER MOSFET, N CHANNEL, 150 V, 4.8 A, 0.095 OHM, SOIC, SURFACE MOUNT
Description
General part information
SI7898 Series
The SI7898DP-T1-E3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply primary side switch and industrial motor driver applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | SI7898DP-T1-E3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 21 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SO-8 |
| Package Name | PowerPAK® SO-8 |
| Power Dissipation (Max) | 1.9 W |
| Rds On (Max) | 85 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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