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Description

General part information

MAT01 Series

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFEmatching of 0.7%.Very high h is provided over a six decade range of collector current, including an exceptional hFEof 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.APPLICATIONSWeigh scalesLow noise, op amp, front endCurrent mirror and current sink/sourceLow noise instrumentation amplifiersVoltage controlled attenuatorsLog amplifiers

Technical Specifications

Parameters and characteristics for this part

SpecificationMAT01GHZ
Current - Collector (Ic) (Max)0.025 mA
Current - Collector Cutoff (Max)400 nA
Frequency - Transition450 MHz
Mounting TypeThrough Hole
NPN Count2
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-78-6 Metal Can
Package NameTO-78-6
Power - Max0.5 W
Transistor ConfigurationDual, Matched Pair
Transistor TypeNPN
Vce Saturation (Max)800 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

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CAD

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