IPW60R017C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 17 MOHM; HIGHEST PERFORMANCE

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IPW60R017C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 17 MOHM; HIGHEST PERFORMANCE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R017C7XKSA1

Current - Continuous Drain (Id) @ 25°C	109 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC
Input Capacitance (Ciss) (Max) @ Vds	9890 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	446 W
Rds On (Max) @ Id, Vgs [Max]	17 mOhm
Supplier Device Package	PG-TO247-3-41
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPW60R017 Series

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPW60R017C7XKSA1	N-Channel	9890 pF	10 V	20 V	446 W	17 mOhm	PG-TO247-3-41	TO-247-3	4 V	109 A	Through Hole	600 V	240 nC	MOSFET (Metal Oxide)	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 17.95
		30	$ 10.89
		120	$ 10.23

Description

General part information

IPW60R017 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Documents

Technical documentation and resources