Specification	HN1B01FU-GR,LXHF

Current - Collector (Ic) (Max)	0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	200
Frequency - Transition (Options)	120MHz, 150MHz
Grade	Automotive
Mounting Type	Surface Mount
NPN Count	1
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	US6
PNP Count	1
Power - Max	200 mW
Qualification	AEC-Q101
Transistor Type	PNP, NPN
Vce Saturation (Max)	300 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

HN1B01FU Series

Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)

Part	DC Current Gain (hFE) (Min)	Frequency - Transition (Options)	Power - Max	Grade	Package Name	PNP Count	Transistor Type	NPN Count	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Mounting Type	Vce Saturation (Max)	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	Qualification	Power - Max (Value 2)	Power - Max (Value 1)	Operating Temperature	Frequency - Transition
Toshiba Semiconductor and Storage HN1B01FU-Y,LXHF	120	120MHz 150MHz	200 mW	Automotive	US6	1	NPN PNP	1	50 V	6-TSSOP SC-88 SOT-363	Surface Mount	250 mV 300 mV	100 nA	0.15 mA	AEC-Q101
Toshiba Semiconductor and Storage HN1B01FU-GR,LF	200				US6	1	NPN PNP	1	50 V	6-TSSOP SC-88 SOT-363	Surface Mount	250 mV	100 nA	0.15 mA		210 mW	200 mW	125 °C	150 MHz
Toshiba Semiconductor and Storage HN1B01FU-GR,LXHF	200	120MHz 150MHz	200 mW	Automotive	US6	1	NPN PNP	1	50 V	6-TSSOP SC-88 SOT-363	Surface Mount	250 mV 300 mV	100 nA	0.15 mA	AEC-Q101