TK040N65Z,S1F
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.04 Ω@10V, TO-247, DTMOSⅥ
TK040N65Z,S1F
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.04 Ω@10V, TO-247, DTMOSⅥ
Description
General part information
TK040N65Z Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.04 Ω@10V, TO-247, DTMOSⅥ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK040N65Z,S1F |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 57 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 105 nC |
| Input Capacitance (Ciss) (Max) | 6250 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power Dissipation (Max) | 360 W |
| Rds On (Max) | 40 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Parasitic Oscillation and Ringing of Power MOSFETs
MOSFET Avalanche Ruggedness
Selection Guide 2024 - MOSFETs
Power MOSFET Thermal Design and Attachment of a Thermal Fin
MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
Power MOSFET Maximum Ratings
MOSFET Gate Driver Circuit
Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
Power MOSFET Electrical Characteristics
Impacts of the dv/dt Rate on MOSFETs
Power MOSFET Structure and Characteristics
TK040N65Z,S1F | Datasheet
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Derating of the MOSFET Safe Operating Area
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Hints and Tips for Thermal Design part3
RC Snubbers for Step-Down Converters
MOSFET SPICE model grade
Simplified CFD Model Application Note
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
TK040N65Z Data sheet/Japanese
Calculating the Temperature of Discrete Semiconductor Devices
Motor Control (Vacuum Cleaners)
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET Secondary Breakdown
Resonant Circuits and Soft Switching
Avalanche energy calculation
MOSFET Self-Turn-On Phenomenon