BUK9Y104-100B,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS LOGIC LEVEL FET

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BUK9Y104-100B,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS LOGIC LEVEL FET

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y104-100B Series

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y104-100B,115

Current - Continuous Drain (Id) (Tc)	14.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1139 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	59 W
Qualification	AEC-Q101
Rds On (Max)	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	2.15 V

BUK9Y104-100B Series

N-channel TrenchMOS logic level FET

Part	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Grade	Technology	Qualification	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Package Name	Rds On (Max)	Vgs(th) (Max)
Nexperia USA Inc. BUK9Y104-100B,115	Surface Mount	14.8 A	SC-100 SOT-669	10 V	5 V	N-Channel	11 nC	-55 °C	175 °C	1139 pF	Automotive	MOSFET (Metal Oxide)	AEC-Q101	100 V	15 V	59 W	LFPAK56 Power-SO8	99 mOhm	2.15 V