Specification	SIHB24N65EF-GE3

Current - Continuous Drain (Id) (Tc)	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	122 nC, 122 nC
Input Capacitance (Ciss) (Max)	2774 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	250 W
Rds On (Max)	156 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHB24 Series

Part	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Rds On (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs (Max)	Power Dissipation (Max)
Vishay Dale SIHB24N65E-E3	2740 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	TO-263 (D2PAK)	24 A	N-Channel	10 V	122 nC 122 nC	145 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	30 V	250 W
Vishay Dale SIHB24N80AE-GE3	1836 pF	800 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	TO-263 (D2PAK)	21 A	N-Channel		89 nC	184 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	30 V	208 W
Vishay Dale SIHB24N65EF-GE3	2774 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	TO-263 (D2PAK)	24 A	N-Channel	10 V	122 nC 122 nC	156 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	30 V	250 W
Vishay Dale SIHB24N65E-GE3	2740 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	TO-263 (D2PAK)	24 A	N-Channel	10 V	122 nC 122 nC	145 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	30 V	250 W
Vishay Dale SIHB24N65ET1-GE3	2740 pF	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	TO-263 (D2PAK)	24 A	N-Channel	10 V	122 nC 122 nC	145 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	30 V	250 W

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