CRG05(TE85L,Q,M)

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Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

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Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CRG05(TE85L,Q,M)

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-123F
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	S-FLAT (1.6x3.5)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Current - Average Rectified (Io)
Toshiba Semiconductor and Storage CRG05(TE85L,Q,M)	Standard Recovery >500ns	200 mA	150 °C	-40 °C	1.2 V	S-FLAT (1.6x3.5)	10 µA	SOD-123F	800 V	Surface Mount	Standard	1 A

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General part information

Diode 800 V 1A Surface Mount S-FLAT (1.6x3.5)

Technical documentation and resources