Specification	C3M0075120J-TR

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	51 nC
Input Capacitance (Ciss) (Max)	1350 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	D2PAK, TO-263-7
Power Dissipation (Max)	113.6 W
Rds On (Max)	90 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	15 V
Vgs(th) (Max)	4 V

C3M0075120 Series

Part	Technology	Vgs(th) (Max)	FET Type	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package Leads	Current - Continuous Drain (Id) (Tc)	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Package / Case
Wolfspeed, Inc. C3M0075120J	SiCFET (Silicon Carbide)	4 V	N-Channel	D2PAK D2PAK-7	1350 pF	113.6 W	15 V	1200 V	7 Leads	30 A	Surface Mount	51 nC	-55 °C	150 °C	90 mOhm	-8 V	19 V
Wolfspeed, Inc. C3M0075120K	SiCFET (Silicon Carbide)	4 V	N-Channel	TO-247-4L	1350 pF	113.6 W	15 V	1200 V		30 A	Through Hole	51 nC	-55 °C	150 °C	90 mOhm	-8 V	19 V	TO-247-4
Wolfspeed, Inc. C3M0075120J-TR	SiCFET (Silicon Carbide)	4 V	N-Channel	D2PAK TO-263-7	1350 pF	113.6 W	15 V	1200 V	7 Leads	30 A	Surface Mount	51 nC	-55 °C	150 °C	90 mOhm	-4 V	15 V
Wolfspeed, Inc. C3M0075120D	SiCFET (Silicon Carbide)	4 V	N-Channel	TO-247-3	1350 pF	113.6 W	15 V	1200 V		30 A	Through Hole	54 nC	-55 °C	150 °C	90 mOhm	-8 V	19 V	TO-247-3

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