Specification	SI7434DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	2.3 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	50 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	155 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI7434 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Technology	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Package Name	Power Dissipation (Max)	Package / Case	Gate Charge (Max)	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SI7434DP-T1-GE3	-55 °C	150 °C	20 V	6 V	10 V	Surface Mount	MOSFET (Metal Oxide)	2.3 A	155 mOhm	PowerPAK® SO-8	1.9 W	PowerPAK® SO-8	50 nC	250 V	N-Channel	4 V
Vishay Dale SI7434DP-T1-E3	-55 °C	150 °C	20 V	6 V	10 V	Surface Mount	MOSFET (Metal Oxide)	2.3 A	155 mOhm	PowerPAK® SO-8	1.9 W	PowerPAK® SO-8	50 nC	250 V	N-Channel	4 V
Vishay Dale SI7434ADP-T1-RE3	-55 °C	150 °C	20 V	7.5 V	10 V	Surface Mount	MOSFET (Metal Oxide)	3.7 A	150 mOhm	PowerPAK® SO-8	5 W 54.3 W	PowerPAK® SO-8	16.5 nC	250 V	N-Channel	4 V	600 pF	12.3 A

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