Specification	IPB039N10N3GE8187ATMA1

Current - Continuous Drain (Id) (Tc)	160 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	117 nC
Input Capacitance (Ciss) (Max)	8410 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	6 Leads
Package Name	PG-TO263-7, TO-263-7, D2PAK
Power Dissipation (Max)	214 W
Rds On (Max)	3.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPB039 Series

Part	Vgs(th) (Max)	Power Dissipation (Max)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Package Leads	Gate Charge (Max)	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Technology	FET Type	Drain to Source Voltage (Vdss)
INFINEON IPB039N10N3GE8187ATMA1	3.5 V	214 W	D2PAK PG-TO263-7 TO-263-7	20 V	160 A	6 Leads	117 nC	3.9 mOhm	6 V	10 V	Surface Mount	-55 °C	175 °C	8410 pF	MOSFET (Metal Oxide)	N-Channel	100 V

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