Specification	SI2343DS-T1-GE3

Current - Continuous Drain (Id) (Ta)	3.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	540 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	750 mW
Rds On (Max)	53 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI2343 Series

Part	Drain to Source Voltage (Vdss)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Technology	Power Dissipation (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs(th) (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id)
Vishay Dale SI2343DS-T1	30 V	SOT-23-3 (TO-236)	20 V	3.1 A	21 nC	540 pF	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	750 mW	P-Channel	-55 °C	150 °C	Surface Mount	3 V	53 mOhm	10 V	4.5 V
Vishay Dale SI2343DS-T1-GE3	30 V	SOT-23-3 (TO-236)	20 V	3.1 A	21 nC	540 pF	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	750 mW	P-Channel	-55 °C	150 °C	Surface Mount	3 V	53 mOhm			10 V
Vishay Dale SI2343CDS-T1-GE3	30 V	SOT-23-3 (TO-236)	20 V		21 nC	590 pF	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	1.25 W 2.5 W	P-Channel	-55 °C	150 °C	Surface Mount	2.5 V	45 mOhm	10 V	4.5 V		5.9 A	5.9 A

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