RN1113(T5L,F,T)

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1113(T5L,F,T)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Resistor - Base (R1)	47 kOhms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)
Toshiba Semiconductor and Storage RN1113,LF(CT	100 nA	SSM	300 mV	Surface Mount	100 mW	NPN - Pre-Biased	100 mA	SC-75 SOT-416	120	250 MHz	50 V	47 kOhms
Toshiba Semiconductor and Storage RN1113(T5L,F,T)	100 nA	SSM	300 mV	Surface Mount	100 mW	NPN - Pre-Biased	100 mA	SC-75 SOT-416	120	250 MHz	50 V	47 kOhms
Toshiba Semiconductor and Storage RN1113MFV,L3F	100 nA	VESM	300 mV	Surface Mount	150 mW	NPN - Pre-Biased	100 mA	SOT-723	120		50 V	47 kOhms
Toshiba Semiconductor and Storage RN1113ACT(TPL3)	100 nA	CST3	150 mV	Surface Mount	100 mW	NPN - Pre-Biased	80 mA	SC-101 SOT-883	120		50 V	47 kOhms

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

Technical documentation and resources

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