Specification	IRS2003PBF

Channel Type	Independent
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET
High Side Voltage - Max (Bootstrap)	200 V
Input Type	Inverting, Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-DIP, 8-PDIP
Package Width	7.62 mm
Rise Time (Typ)	70 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2003 Series

Part	Gate Type	Gate Channel	Current - Peak Output (Sink)	Current - Peak Output (Source)	Channel Type	Number of Drivers	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Logic Voltage - VIL	Logic Voltage - VIH	Driven Configuration	High Side Voltage - Max (Bootstrap)	Mounting Type	Package Length	Package Name	Package Width	Input Type	Fall Time (Typ)	Rise Time (Typ)
INFINEON IRS2003PBF	IGBT MOSFET N-Channel MOSFET	N-Channel	600 mA	290 mA	Independent	2	-40 °C	150 °C	10 VDC	20 V	0.8 V	2.5 V	Half-Bridge	200 V	Through Hole	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting Non-Inverting	35 ns	70 ns
INFINEON IRS2003SPBF	IGBT MOSFET N-Channel MOSFET	N-Channel	600 mA	290 mA	Independent	2	-40 °C	150 °C	10 VDC	20 V	0.8 V	2.5 V	Half-Bridge	200 V	Surface Mount	0.154 in	8-SOIC	3.9 mm	Inverting Non-Inverting	35 ns	70 ns
INFINEON IRS2003PBF	IGBT MOSFET	N-Channel	600 mA	290 mA	Independent	2	-40 °C	150 °C	10 VDC	20 V	0.8 V	2.5 V	Half-Bridge	200 V	Through Hole	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting Non-Inverting	35 ns	70 ns

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