Specification	NE68139R-T1

Current - Collector (Ic) (Max)	65 mA
DC Current Gain (hFE) (Min)	50
Frequency - Transition	9 GHz
Gain	13.5 dB
Mounting Type	Surface Mount
Noise Figure (Typical) Maximum	2 dB
Noise Figure (Typical) Minimum	1.2 dB
Operating Temperature	150 °C
Package / Case	SOT-143R
Package Name	SOT-143R
Power - Max	200 mW
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10 V

NE68139 Series

Part	Transistor Type	Noise Figure (Typical)	Mounting Type	Package / Case	Frequency - Transition	DC Current Gain (hFE) (Min)	Gain	Voltage - Collector Emitter Breakdown (Max)	Package Name	Current - Collector (Ic) (Max)	Power - Max	Operating Temperature	Noise Figure (Typical) Minimum	Noise Figure (Typical) Maximum
Renesas Electronics Corporation NE68139-T1-A	NPN	1.2 dB	Surface Mount	TO-253-4 TO-253AA	9 GHz	50	13.5 dB 15 dB	10 V	SOT-143	65 mA	200 mW	150 °C
Renesas Electronics Corporation NE68139R-T1	NPN		Surface Mount	SOT-143R	9 GHz	50	13.5 dB	10 V	SOT-143R	65 mA	200 mW	150 °C	1.2 dB	2 dB
Renesas Electronics Corporation NE68139-A	NPN	1.2 dB	Surface Mount	TO-253-4 TO-253AA	9 GHz	50	13.5 dB	10 V	SOT-143	65 mA	200 mW	150 °C
Renesas Electronics Corporation NE68139R-T1-A	NPN		Surface Mount	SOT-143R	9 GHz	50	13.5 dB	10 V	SOT-143R	65 mA	200 mW	150 °C	1.2 dB	2 dB
Renesas Electronics Corporation NE68139-T1	NPN		Surface Mount	TO-253-4 TO-253AA	9 GHz	50	13.5 dB	10 V	SOT-143	65 mA	200 mW	150 °C	1.2 dB	2 dB

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