Specification	IPL65R210CFDAUMA1

Current - Continuous Drain (Id) (Tc)	16.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	1850 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	4-PowerTSFN
Package Name	PG-VSON-4
Power Dissipation (Max)	151 W
Rds On (Max)	210 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPL65R210 Series

Part	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Technology	Gate Charge (Max)	FET Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Package Name	Power Dissipation (Max)
INFINEON IPL65R210CFDAUMA2	16.6 A	650 V	10 V	20 V	Surface Mount	1850 pF	4.5 V	MOSFET (Metal Oxide)	68 nC	N-Channel	210 mOhm	-40 °C	150 °C	4-PowerTSFN	PG-VSON-4	151 W
INFINEON IPL65R210CFDAUMA1	16.6 A	650 V	10 V	20 V	Surface Mount	1850 pF	4.5 V	MOSFET (Metal Oxide)	68 nC	N-Channel	210 mOhm	-40 °C	150 °C	4-PowerTSFN	PG-VSON-4	151 W

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