Specification	SQJ456EP-T2_GE3

Current - Continuous Drain (Id) (Tc)	32 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	63 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3342 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max)	26 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQJ456 Series

Part	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Qualification	Input Capacitance (Ciss) (Max)	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Technology	Package / Case	Grade	Mounting Type	Gate Charge (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name
Vishay Dale SQJ456EP-T2_GE3	32 A	26 mOhm	AEC-Q101	3342 pF	20 V	83 W	3.5 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	Automotive	Surface Mount	63 nC	100 V	N-Channel	6 V	10 V	-55 °C	175 °C	PowerPAK® SO-8

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