PSMN1R8-40YLC,115

Active

Nexperia USA Inc.

N-CHANNEL 40 V 1.8 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

Find alt

Alpha

PSMN1R8-40YLC,115

Active

Nexperia USA Inc.

N-CHANNEL 40 V 1.8 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN1R8-40YLC Series

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R8-40YLC,115

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	96 nC
Input Capacitance (Ciss) (Max)	6680 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	272 W
Rds On (Max)	1.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.95 V

PSMN1R8-40YLC Series

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology

Part	Gate Charge (Max)	Vgs (Max)	Mounting Type	FET Type	Package / Case	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Rds On (Max)	Technology
Nexperia USA Inc. PSMN1R8-40YLC,115	96 nC	20 V	Surface Mount	N-Channel	SC-100 SOT-669	6680 pF	40 V	272 W	100 A	LFPAK56 Power-SO8	-55 °C	175 °C	10 V	4.5 V	1.95 V	1.8 mOhm	MOSFET (Metal Oxide)