Specification	IPN80R900P7ATMA1

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	PG-SOT223
Power Dissipation (Max)	7 W
Rds On (Max)	900 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPN80R900 Series

Part	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Technology	Package / Case
INFINEON IPN80R900P7ATMA1	PG-SOT223	10 V	800 V	N-Channel	20 V	6 A	-55 °C	150 °C	900 mOhm	3.5 V	7 W	15 nC	350 pF	Surface Mount	MOSFET (Metal Oxide)	TO-261-4 TO-261AA

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