AOT10B65M1

Alpha & Omega Semiconductor Inc.

IGBT 650V 20A TO-220

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Alpha & Omega Semiconductor Inc.

IGBT 650V 20A TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT10B65M1

Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	24 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	150 W
Reverse Recovery Time (trr)	262 ns
Supplier Device Package	TO-220
Switching Energy	130 µJ, 180 µJ
Td (on/off) @ 25°C	91 ns
Td (on/off) @ 25°C	12 ns
Test Condition	10 A, 30 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Test Condition	Gate Charge	Reverse Recovery Time (trr)	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max)	Switching Energy	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology
Alpha & Omega Semiconductor Inc. AOT10B65M1	2 V	TO-220-3	30 A	-55 °C	175 ░C	TO-220	10 A 15 V 30 Ohm 400 V	24 nC	262 ns	Through Hole	91 ns	12 ns	20 A	130 µJ 180 µJ	150 W	650 V
Alpha & Omega Semiconductor Inc. AOT10N60		TO-220-3		-55 °C	150 °C	TO-220				Through Hole							40 nC	1600 pF	4.5 V	250 W	600 V	750 mOhm	N-Channel	10 V	30 V	10 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.84