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NJG1812ME4-TE1

NJG1812ME4-TE1

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Nisshinbo Micro Devices Inc.

RF SWITCH ICS HP DPDT SWITCH GAAS 1.8V UP TO 3GHZ

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NJG1812ME4-TE1

NJG1812ME4-TE1

Active
Nisshinbo Micro Devices Inc.

RF SWITCH ICS HP DPDT SWITCH GAAS 1.8V UP TO 3GHZ

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Description

General part information

NJG1812 Series

RF Switch IC CDMA, GSM, LTE, UMTS DPDT 50Ohm 12-EQFN (2x2)

Technical Specifications

Parameters and characteristics for this part

SpecificationNJG1812ME4-TE1
CircuitDPDT
FeaturesDC Blocked
Frequency Range3 GHz
Impedance50 Ohm
Insertion Loss0.45 dB
Isolation17 dB
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case12-XFQFN Exposed Pad
Package Length2 mm
Package Name12-EQFN
Package Width2 mm
RF TypeCDMA, UMTS, GSM, LTE
Test Frequency2.7 GHz
Voltage - Supply (Maximum)5 V
Voltage - Supply (Minimum)2.4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

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