Specification	TSM250NB06CV RGG

Current - Continuous Drain (Id) (Ta)	6 A
Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	1440 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	3.15 mm
Package Name	8-PDFN
Package Width	3.1 mm
Power Dissipation (Max)	1.9 W, 42 W
Rds On (Max)	25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

TSM250NB06CV Series

Part	Technology	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Package Length	Package Width	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
Taiwan Semiconductor Corporation TSM250NB06CV RGG	MOSFET (Metal Oxide)	Surface Mount	1440 pF	28 A	6 A	1.9 W 42 W	20 V	10 V	7 V	8-PDFN	3.15 mm	3.1 mm	25 mOhm	60 V	4 V	23 nC	N-Channel	-55 °C	150 °C	8-PowerWDFN

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