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DMP2067LVT-13 - TSOT-26

DMP2067LVT-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2067LVT-13 - TSOT-26

DMP2067LVT-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2067LVT-13
Current - Continuous Drain (Id) @ 25°C4.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1575 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)1.2 W
Rds On (Max) @ Id, Vgs45 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.11
20000$ 0.10
30000$ 0.09
50000$ 0.09

Description

General part information

DMP2067LVT Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.