IXFP34N65X2W
ActiveDISCRETE MOSFET 34A 650V X2 TO220
IXFP34N65X2W
ActiveDISCRETE MOSFET 34A 650V X2 TO220
Description
General part information
IXFP34N65X2W Series
Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFP34N65X2W |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 34 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 56 nC |
| Input Capacitance (Ciss) (Max) | 3230 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 (IXFP) |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) | 100 mOhm, 100 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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