NX5008NBKHH
ActiveNexperia USA Inc.
MOSFET N-CH 50V 350MA DFN0606-3
NX5008NBKHH
ActiveNexperia USA Inc.
MOSFET N-CH 50V 350MA DFN0606-3
Description
General part information
NX5008NBKH Series
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | NX5008NBKHH |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 350 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.7 nC, 0.7 nC |
| Input Capacitance (Ciss) (Max) | 30 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 3-XFDFN |
| Package Name | DFN0606-3 |
| Power Dissipation (Max) | 380 mW, 2.8 W |
| Rds On (Max) | 2.8 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 900 mV |
Pricing
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CAD
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Documents
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