Specification	SI7137DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	585 nC
Input Capacitance (Ciss) (Max)	20000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	1.95 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.4 V

SI7137 Series

Part	Rds On (Max)	Package / Case	Technology	Gate Charge (Max)	FET Type	Drain to Source Voltage (Vdss)	Package Name	Vgs (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs(th) (Max)
Vishay Dale SI7137DP-T1-GE3	1.95 mOhm	PowerPAK® SO-8	MOSFET (Metal Oxide)	585 nC	P-Channel	20 V	PowerPAK® SO-8	12 V	20000 pF	60 A	10 V	2.5 V	6.25 W 104 W	-55 °C	150 °C	Surface Mount	1.4 V

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