Specification	SI1411DH-T1-E3

Current - Continuous Drain (Id) (Ta)	420 mA
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	6.3 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	SC-70-6
Power Dissipation (Max)	1 W
Rds On (Max)	2.6 Ohm, 2.6 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

SI1411 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Package Name	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max)	Gate Charge (Max)
Vishay Dale SI1411DH-T1-GE3	-55 °C	150 °C	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	1 W	10 V	P-Channel	20 V	420 mA	SC-70-6	4.5 V	150 V	Surface Mount	2.6 Ohm 2.6 Ohm	6.3 nC
Vishay Dale SI1411DH-T1-E3	-55 °C	150 °C	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	1 W	10 V	P-Channel	20 V	420 mA	SC-70-6	4.5 V	150 V	Surface Mount	2.6 Ohm 2.6 Ohm	6.3 nC
Vishay Dale SI1411DH-T1-BE3	-55 °C	150 °C	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	1 W		P-Channel	20 V	420 mA	SC-70-6	4.5 V	150 V	Surface Mount	2.6 Ohm 2.6 Ohm	6.3 nC

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