
MJD2873J
ActiveNexperia USA Inc.
50 V, 2 A NPN HIGH POWER BIPOLAR TRANSISTOR

MJD2873J
ActiveNexperia USA Inc.
50 V, 2 A NPN HIGH POWER BIPOLAR TRANSISTOR
Description
General part information
MJD2873 Series
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD2873J |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 65 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 1.6 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part