IRF7484PBF

Obsolete

Infineon Technologies

MOSFET N-CH 40V 14A 8SO

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 14A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7484PBF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 7 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	3520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Infineon Technologies IRF7484PBF	2 V	-55 °C	150 °C	10 mOhm	Surface Mount	7 V 7 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	14 A	8 V	2.5 W	N-Channel	8-SO	100 nC	3520 pF	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$