IS64WV25616EFBLL-10CTLA3
ActiveISSI, Integrated Silicon Solution Inc
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,10NS,2.4V-3.6V,44 PIN TSOP II, ROHS, AUTOMOTIVE TEMP
IS64WV25616EFBLL-10CTLA3
ActiveISSI, Integrated Silicon Solution Inc
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,10NS,2.4V-3.6V,44 PIN TSOP II, ROHS, AUTOMOTIVE TEMP
Description
General part information
IS61WV25616EFBLL Series
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,10NS,2.4V-3.6V,44 PIN TSOP II, ROHS, AUTOMOTIVE TEMP
Technical Specifications
Parameters and characteristics for this part
| Specification | IS64WV25616EFBLL-10CTLA3 |
|---|---|
| Access Time | 10 ns |
| Grade | Automotive |
| Memory Depth | 256 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 4 Mbit |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 10.16 mm |
| Package Name | 44-TSOP II, 44-TSOP |
| Package Width | 10.16 mm |
| Qualification | AEC-Q100 |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.4 V |
| Write Cycle Time - Page | 10 ns |
| Write Cycle Time - Word | 10 ns |
Pricing
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