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INFINEON BSZ024N04LS6ATMA1

BSZ024N04LS6ATMA1

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INFINEON

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 2.4 MOHM;

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INFINEON BSZ024N04LS6ATMA1

BSZ024N04LS6ATMA1

Active
INFINEON

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 2.4 MOHM;

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Description

General part information

BSZ024 Series

TheOptiMOS™ 6 power MOSFET 40 V familyis optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on)x Qgand Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ024N04LS6ATMA1
Current - Continuous Drain (Id) (Ta)24 A
Current - Continuous Drain (Id) (Tc)40 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)25 nC
Input Capacitance (Ciss) (Max)1800 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSDSON-8-FL
Power Dissipation (Max)75 W, 2.5 W
Rds On (Max)2.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.3 V

Pricing

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