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TPH1R306P1 - 12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00128 Ω@10V, SOP Advance, U-MOSⅨ-H

TPH9R506PL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0095 Ω@10V, SOP ADVANCE, U-MOSⅨ-H

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TPH1R306P1 - 12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00128 Ω@10V, SOP Advance, U-MOSⅨ-H

TPH9R506PL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0095 Ω@10V, SOP ADVANCE, U-MOSⅨ-H

Find alt

Description

General part information

TPH9R506PL Series

12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0095 Ω@10V, SOP Advance, U-MOSⅨ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTPH9R506PL,LQ
Current - Continuous Drain (Id) (Tc)34 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)21 nC
Input Capacitance (Ciss) (Max)1910 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Package Length5 mm
Package Name8-SOP Advance
Package Width5 mm
Power Dissipation (Max)830 mW, 81 W
Rds On (Max)9.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Electrical Characteristics: Power MOSFET Application Notes
TPH9R506PL Data sheet/Japanese
Avalanche energy calculation
MOSFET Self-Turn-On Phenomenon
Calculating the Temperature of Discrete Semiconductor Devices
TPH9R506PL Data sheet/English
Hints and Tips for Thermal Design part3
RC Snubbers for Step-Down Converters
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET SPICE model grade
Motor Control (Vacuum Cleaners)
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Structures and Characteristics: Power MOSFET Application Notes
Simplified CFD Model Application Note
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Selection Guide MOSFETs 2025 Rev1.0
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Derating of the MOSFET Safe Operating Area