STPSC10H12D
ObsoleteSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 10 A, 57 NC, TO-220AC
STPSC10H12D
ObsoleteSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 10 A, 57 NC, TO-220AC
Description
General part information
STPSC10H12 Series
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC10H12D |
|---|---|
| Capacitance | 725 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 60 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220AC |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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CAD
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