STB7N52K3

Obsolete

STMicroelectronics

MOSFET N-CH 525V 6A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 525V 6A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB7N52K3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	525 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	737 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	980 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STB7N52K3	10 V	525 V	MOSFET (Metal Oxide)	980 mOhm	Surface Mount	30 V	6 A	90 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	34 nC	4.5 V	TO-263 (D2PAK)	N-Channel	150 °C	737 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 525 V 6A (Tc) 90W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources