IRF3415PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 43 A, 0.042 OHM, TO-220AB, THROUGH HOLE

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IRF3415PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 43 A, 0.042 OHM, TO-220AB, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF3415PBF

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs [Max]	42 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF3415 Series

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
Infineon Technologies IRF3415PBF	200 W	150 V	Through Hole	N-Channel	-55 °C	175 ░C	4 V	TO-220AB	MOSFET (Metal Oxide)	2400 pF	10 V	42 mOhm	TO-220-3	43 A	200 nC	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.14
		10	$ 1.59
		100	$ 1.12
		500	$ 0.84
		1000	$ 0.77
		3000	$ 0.77
Digikey	Tube	1	$ 2.89
		10	$ 1.87
		100	$ 1.29
		500	$ 1.05
		1000	$ 0.97
		2000	$ 0.90
Newark	Each	1	$ 2.26
		10	$ 1.65
		100	$ 1.25
		500	$ 0.95
		1000	$ 0.87
		3000	$ 0.86
		5000	$ 0.86

Description

General part information

IRF3415 Series

The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

Documents

Technical documentation and resources