1SR154-600TE25

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Rohm Semiconductor

DIODE GEN PURP 600V 1A PMDS

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Rohm Semiconductor

DIODE GEN PURP 600V 1A PMDS

Technical Specifications

Parameters and characteristics for this part

Specification	1SR154-600TE25

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	DO-214AC, SMA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	PMDS
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 600V 1A PMDS

Part	Speed	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction	Technology	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor 1SR154-600TE25	Standard Recovery >500ns	200 mA	DO-214AC, SMA	1.1 V	150 °C	Standard	Surface Mount	1 A	10 µA	PMDS	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 1A Surface Mount PMDS

Technical documentation and resources

No documents available