Specification	MBRT300100R

Current - Average Rectified (Io) (per Diode)	150 A
Current - Reverse Leakage	1 mA
Diode Configuration	Common Anode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Three Tower
Package Name	Three Tower
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V
Voltage - Forward (Vf) (Max)	880 mV

MBRT300 Series

Part	Technology	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Current - Average Rectified (Io) (per Diode)	Package Name	Diode Pair Count	Diode Configuration	Mounting Type	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Package / Case
GeneSiC Semiconductor MBRT300100	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Cathode	Chassis Mount	500 ns	200 mA	100 V	880 mV	Three Tower
GeneSiC Semiconductor MBRT30030L	Schottky	150 °C	-55 °C	3 mA	150 A	Three Tower	1 pair	Common Cathode	Chassis Mount	500 ns	200 mA	30 V	580 mV	Three Tower
GeneSiC Semiconductor MBRT30080	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Cathode	Chassis Mount	500 ns	200 mA	80 V	880 mV	Three Tower
GeneSiC Semiconductor MBRT30030R	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Anode	Chassis Mount	500 ns	200 mA	30 V	750 mV	Three Tower
GeneSiC Semiconductor MBRT300150	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Cathode	Chassis Mount	500 ns	200 mA	150 V	880 mV	Three Tower
GeneSiC Semiconductor MBRT30035R	Reverse Polarity Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Anode	Chassis Mount	500 ns	200 mA	35 V	750 mV	Three Tower
GeneSiC Semiconductor MBRT300100R	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Anode	Chassis Mount	500 ns	200 mA	100 V	880 mV	Three Tower
GeneSiC Semiconductor MBRT30020R	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Anode	Chassis Mount	500 ns	200 mA	20 V	750 mV	Three Tower
GeneSiC Semiconductor MBRT300200R	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Anode	Chassis Mount	500 ns	200 mA	200 V	920 mV	Three Tower
GeneSiC Semiconductor MBRT30020R	Schottky	150 °C	-55 °C	1 mA	150 A	Three Tower	1 pair	Common Anode	Chassis Mount	500 ns	200 mA	20 V	750 mV	Three Tower

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Technical documentation and resources

MBRT300100R | Datasheet