NGW40T65H3DFPQ
Active650 V, 40 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
NGW40T65H3DFPQ
Active650 V, 40 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
Description
General part information
NGW40T65H3DFP Series
The NGW40T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NGW40T65H3DFPQ |
|---|---|
| Current - Collector (Ic) (Max) | 72 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Gate Charge | 62 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3L |
| Power - Max | 275 VA |
| Reverse Recovery Time (trr) | 130 ns |
| Switching Energy (Off) | 340 µJ |
| Switching Energy (On) | 1.16 mJ |
| Td (off) @ 25°C | 72 ns |
| Td (on) @ 25°C | 17 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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