Specification	2SK3309(TE24L,Q)

Current - Continuous Drain (Id) (Ta)	10 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	920 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-220SM
Power Dissipation (Max)	65 W
Rds On (Max)	650 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

2SK3309 Series

Part	Vgs (Max)	Mounting Type	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Package Name	Drain to Source Voltage (Vdss)	FET Type	Technology	Power Dissipation (Max)	Rds On (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage 2SK3309(TE24L,Q)	30 V	Surface Mount	23 nC	920 pF	150 °C	5 V	10 A	TO-220SM	450 V	N-Channel	MOSFET (Metal Oxide)	65 W	650 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V
Toshiba Semiconductor and Storage 2SK3309(Q)	30 V	Through Hole	23 nC	920 pF	150 °C	5 V	10 A	TO-220FL	450 V	N-Channel	MOSFET (Metal Oxide)	65 W	650 mOhm	Short Tab TO-220-3	10 V

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