Specification	SI1067X-T1-E3

Current - Continuous Drain (Id) (Ta)	1.06 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	9.3 nC
Input Capacitance (Ciss) (Max)	375 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power Dissipation (Max)	236 mW
Rds On (Max)	150 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

SI1067 Series

Part	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max)	Package / Case	Vgs (Max)	Rds On (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Input Capacitance (Ciss) (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI1067X-T1-E3	20 V	MOSFET (Metal Oxide)	950 mV	SOT-563 SOT-666	8 V	150 mOhm	Surface Mount	4.5 V	1.8 V	SC-89 (SOT-563F)	375 pF	P-Channel	1.06 A	236 mW	9.3 nC	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources