Specification	SQM47N10-24L_GE3

Current - Continuous Drain (Id) (Tc)	47 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	72 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3620 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQM Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Package / Case	Package Name	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Grade	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Current - Continuous Drain (Id) (Tc)	Qualification
Vishay Dale SQM47N10-24L_GE3	10 V	4.5 V	3620 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	2.5 V	72 nC	Surface Mount	20 V	136 W	Automotive	24 mOhm	100 V	-55 °C	175 °C	N-Channel	MOSFET (Metal Oxide)	47 A	AEC-Q101
Vishay Dale SQM110N05-06L_GE3	10 V	4.5 V	4440 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	2.5 V	110 nC	Surface Mount	20 V	157 W	Automotive	6 mOhm	55 V	-55 °C	175 °C	N-Channel	MOSFET (Metal Oxide)	110 A	AEC-Q101
Vishay Dale SQM40061EL_GE3	10 V	4.5 V	14500 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	2.5 V	280 nC	Surface Mount	20 V	150 W	Automotive		40 V	-55 °C	175 °C	P-Channel	MOSFET (Metal Oxide)	100 A	AEC-Q101

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