VT6J1T2CR

Active

Rohm Semiconductor

MOSFET 2P-CH 20V 0.1A VMT6

Search across all available documentation for this part.

Active

Rohm Semiconductor

MOSFET 2P-CH 20V 0.1A VMT6

Technical Specifications

Parameters and characteristics for this part

Specification	VT6J1T2CR

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	15 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	120 mW
Rds On (Max) @ Id, Vgs	3.8 Ohm
Supplier Device Package	VMT6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

MOSFET 2P-CH 20V 0.1A VMT6

Part	FET Feature	FET Feature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Operating Temperature	Package / Case	Configuration	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs
Rohm Semiconductor VT6J1T2CR	1.2 V	Logic Level Gate	100 mA	1 V	120 mW	15 pF	MOSFET (Metal Oxide)	20 V	150 °C	6-SMD, Flat Leads	2 P-Channel	VMT6	Surface Mount	3.8 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly