Specification	2SB906-Y(TE16L1,NQ

Current - Collector (Ic) (Max)	3 A
Current - Collector Cutoff (Max)	100 µA
DC Current Gain (hFE) (Min)	100
Frequency - Transition	9 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PW-MOLD
Power - Max	1 VA
Transistor Type	PNP
Vce Saturation (Max)	1.7 V
Voltage - Collector Emitter Breakdown (Max)	60 V

2SB906 Series

Bipolar Transistors, PNP Bipolar Transistor, -60 V, -3 A, New PW-Mold

Part	DC Current Gain (hFE) (Min)	Mounting Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Vce Saturation (Max)	Package Name	Power - Max	Current - Collector Cutoff (Max)	Frequency - Transition	Operating Temperature	Package / Case
Toshiba Semiconductor and Storage 2SB906-Y(TE16L1,NQ	100	Surface Mount	3 A	60 V	PNP	1.7 V	PW-MOLD	1 VA	100 µA	9 MHz	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3

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