Description
General part information
IRF200 Series
Improved Gate, Avalanche and Dynamic dv/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dv/dt and di/dt CapabilityLead-Free, RoHS Compliant
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF200P222 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 182 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 203 nC |
| Input Capacitance (Ciss) (Max) | 9820 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247AC |
| Power Dissipation (Max) | 556 W |
| Rds On (Max) | 6.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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