TK16A60W5,S4VX
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.23 Ω@10V, TO-220SIS, DTMOSⅣ
TK16A60W5,S4VX
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.23 Ω@10V, TO-220SIS, DTMOSⅣ
Description
General part information
TK16A60W5 Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.23 Ω@10V, TO-220SIS, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK16A60W5,S4VX |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 43 nC |
| Input Capacitance (Ciss) (Max) | 1350 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220SIS |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) | 190 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 3.7 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TK16A60W5,S4VX | Datasheet
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
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TK16A60W5 Data sheet/Japanese
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Derating of the MOSFET Safe Operating Area
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Selection Guide MOSFETs 2025 Rev1.0
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Simplified CFD Model Application Note
MOSFET SPICE model grade
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET Secondary Breakdown
Structures and Characteristics: Power MOSFET Application Notes
Resonant Circuits and Soft Switching