DMP2006UFGQ-13

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Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2006UFGQ-13

Current - Continuous Drain (Id) @ 25°C	17.5 A, 40 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.3 W, 41 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

NRND = Not Recommended for New Design

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Grade
Diodes Inc DMP2006UFG-7	1 V	1.5 V 4.5 V	20 V	5.2 mOhm	POWERDI3333-8	17.5 A 40 A	10 V	-55 °C	150 °C	8-PowerVDFN	Surface Mount	5404 pF	140 nC	P-Channel	2.3 W	MOSFET (Metal Oxide)
Diodes Inc DMP2006UFGQ-13	1 V	1.5 V 4.5 V	20 V	5.5 mOhm	POWERDI3333-8	17.5 A 40 A	10 V	-55 °C	150 °C	8-PowerVDFN	Surface Mount			P-Channel	2.3 W 41 W	MOSFET (Metal Oxide)	200 nC	7500 pF	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources