JAN1N6622U

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Microsemi Corporation

DIODE GEN PURP 600V 1.2A D-5A

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Microsemi Corporation

DIODE GEN PURP 600V 1.2A D-5A

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6622U

Current - Average Rectified (Io)	1.2 A
Current - Reverse Leakage @ Vr	500 nA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Qualification	MIL-PRF-19500/585
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5A
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Speed	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Grade	Qualification
Microsemi Corporation JAN1N6622U	200 mA 500 ns	Surface Mount	D-5A	150 °C	-65 C	Standard	600 V	30 ns	1.4 V	500 nA	1.2 A	Military	MIL-PRF-19500/585
Microsemi Corporation JANTXV1N6622U	200 mA 500 ns	Surface Mount	D-5A	150 °C	-65 C	Standard	600 V	30 ns	1.4 V	500 nA	1.2 A	Military	MIL-PRF-19500/585

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 12.30

General part information

Diode 600 V 1.2A Surface Mount D-5A

Technical documentation and resources

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