SST39VF802C-70-4C-EKE
ActiveFLASH MEMORY, BOOT BLOCK, PARALLEL NOR, 8 MBIT, 512K X 16BIT, PARALLEL, TSOP, 48 PINS
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SST39VF802C-70-4C-EKE
ActiveFLASH MEMORY, BOOT BLOCK, PARALLEL NOR, 8 MBIT, 512K X 16BIT, PARALLEL, TSOP, 48 PINS
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | SST39VF802C-70-4C-EKE | SST39VF802 Series |
|---|---|---|
| Access Time | 70 ns | 70 ns |
| Memory Format | FLASH | FLASH |
| Memory Interface | Parallel | Parallel |
| Memory Organization | 512 K | 512 K |
| Memory Size | 1024 KB | 1024 KB |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 70 °C | 70 - 85 °C |
| Operating Temperature [Min] | 0 °C | -40 - 0 °C |
| Package / Case | 48-TFSOP | 48-WFBGA, 48-TFBGA, 48-TFSOP |
| Package / Case [y] | 18.4 mm | 18.4 mm |
| Package / Case [y] | 0.724 in | 0.724 in |
| Supplier Device Package | 48-TSOP | 48-WFBGA (6x4), 48-TFBGA (6x8), 48-TSOP |
| Technology | FLASH | FLASH |
| Voltage - Supply [Max] | 3.6 V | 3.6 V |
| Voltage - Supply [Min] | 2.7 V | 2.7 V |
| Write Cycle Time - Word, Page | 10 µs | 10 µs |
SST39VF802 Series
8Mb 2.7-3.6V Parallel Flash
| Part | Memory Organization | Memory Interface | Package / Case | Memory Size | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Voltage - Supply [Min] | Voltage - Supply [Max] | Access Time | Mounting Type | Memory Type | Memory Format | Write Cycle Time - Word, Page | Package / Case [y] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology SST39VF802C-70-4I-MAQE | 512 K | Parallel | 48-WFBGA | 1024 KB | 48-WFBGA (6x4) | 85 °C | -40 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | ||
Microchip Technology SST39VF802C-70-4I-B3KE-T | 512 K | Parallel | 48-TFBGA | 1024 KB | 48-TFBGA (6x8) | 85 °C | -40 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | ||
Microchip Technology SST39VF802C-70-4C-EKE-T | 512 K | Parallel | 48-TFSOP | 1024 KB | 48-TSOP | 70 °C | 0 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | 18.4 mm | 0.724 in |
Microchip Technology SST39VF802C-70-4I-MAQE-T | 512 K | Parallel | 48-WFBGA | 1024 KB | 48-WFBGA (6x4) | 85 °C | -40 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | ||
Microchip Technology SST39VF802C-70-4C-EKE | 512 K | Parallel | 48-TFSOP | 1024 KB | 48-TSOP | 70 °C | 0 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | 18.4 mm | 0.724 in |
Microchip Technology SST39VF802C-70-4I-B3KE | 512 K | Parallel | 48-TFBGA | 1024 KB | 48-TFBGA (6x8) | 85 °C | -40 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | ||
Microchip Technology SST39VF802C-70-4C-MAQE-T | 512 K | Parallel | 48-WFBGA | 1024 KB | 48-WFBGA (6x4) | 70 °C | 0 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | ||
Microchip Technology SST39VF802C-70-4C-B3KE-T | 512 K | Parallel | 48-TFBGA | 1024 KB | 48-TFBGA (6x8) | 70 °C | 0 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs | ||
Microchip Technology SST39VF802C-70-4C-B3KE | 512 K | Parallel | 48-TFBGA | 1024 KB | 48-TFBGA (6x8) | 70 °C | 0 °C | FLASH | 2.7 V | 3.6 V | 70 ns | Surface Mount | Non-Volatile | FLASH | 10 µs |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 288 | $ 2.52 | |
| Microchip Direct | TRAY | 1 | $ 2.65 | |
| 25 | $ 2.54 | |||
| 100 | $ 2.45 | |||
| 1000 | $ 2.33 | |||
| 5000 | $ 2.19 | |||
| Newark | Each | 1 | $ 2.55 | |
Description
General part information
SST39VF802 Series
The SST39VF802C device is 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF802C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.