Catalog
8Mb 2.7-3.6V Parallel Flash
Key Features
• + Organized as 512K x16
• + Low Power Consumption (typical values at 5 MHz)– Active Current: 5 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
• + Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 8 KWord)– Bottom Block-Protection (bottom 8 KWord)
• + Sector-Erase Capability– Uniform 2 KWord sectors
• + Block-Erase Capability– Flexible block architecture; one 8-, two 4-, one16-, and fifteen 32-KWord blocks
• + Chip-Erase Capability
• + Erase-Suspend/Erase-Resume Capabilities
• + Hardware Reset Pin (RST#)
• + Latched Address and Data
• + Security-ID Feature– SST: 128 bits; User: 128 words
• + Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
• + Automatic Write Timing– Internal VPP Generation
• + End-of-Write Detection– Toggle Bits– Data# Polling– Ready/Busy# Pin
• + CMOS I/O Compatibility
• + JEDEC Standard– Flash EEPROM Pinouts and command sets
• + Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)
Description
AI
The SST39VF802C device is 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF802C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.