BSM75GB120DN2HOSA1

Obsolete

Infineon Technologies

IGBT MOD 1200V 105A 625W

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT MOD 1200V 105A 625W

Technical Specifications

Parameters and characteristics for this part

Specification	BSM75GB120DN2HOSA1

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	105 A
Current - Collector Cutoff (Max)	1.5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	5.5 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	Module
Power - Max [Max]	625 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	NTC Thermistor	Input	Input Capacitance (Cies) @ Vce	Mounting Type	Configuration	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Power - Max [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Infineon Technologies BSM75GB120DN2HOSA1	Module	105 A		Standard	5.5 nF	Chassis Mount	Half Bridge	1200 V	150 °C	3 V	1.5 mA	625 W	Module
Infineon Technologies BSM75GB120DLCHOSA1	Module			Standard	5.1 nF	Chassis Mount	2 Independent	1200 V		2.6 V		690 W	Module	5 mA	125 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1200 V 105 A 625 W Chassis Mount Module

Technical documentation and resources

No documents available